HNU-EBL related journals are as follows：
[1] Chen J, Zhao H, Zhang S, et al. A hybrid proximity effect correction method based on separation of forward-/back-scattering and cumulative distribution function[C]//Eighth International Workshop on Advanced Patterning Solutions (IWAPS 2024). SPIE, 2024, 13423: 195-204.Download
[2] MA W, YAO K, ZHONG X, LIU J, et al. Efficient Calculation of Charging Effects in Electron Beam Lithography Using the SA-AMG [J]. IEEE Electron Device Letters, 2024. DOI: 10.1109/LED.2024.3448504Download
[3] W. Yao, H. Xu,, H. Zhao, et al. Fast and accurate proximity effect correction algorithm based on pattern edge shape adjustment for electron beam lithography[J]. Microelectronics Journal, 2023: 105718, doi: 10.1016/j.mejo.2023.105718.Download
[4] W. Yao, H. Zhao, C. Hou et al. Efficient Proximity Effect Correction Using Fast Multipole Method with Unequally Spaced Grid for Electron Beam Lithography[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 42, no. 1, pp. 218-228, 2023, doi: 10.1109/TCAD.2022.3171441.Download
[5] 姚文泽,徐宏成,赵浩杰,刘薇,侯程阳,陈艺勤,段辉高,刘杰.电子束光刻“自主可控”EDA软件HNU-EBL[J].湖南大学学报(自然科学版),2022,49(10):183-191,doi:10.16339/j.cnki.hdxbzkb.2022239.Download
[6] W. Yao, Y. Yang, J. Liu, et al. Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Multilayer Perceptron Neural Network[C]. 2022 International Workshop on Advanced Patterning Solutions (IWAPS). IEEE, 2022: 1-4, doi: 10.1109/IWAPS57146.2022.9972305.Download
[7] H. Zhao, W. Yao, H. Xu, et al. Accurate and Efficient Proximity Effect Correction for Electron Beam Lithography Based on Distributed Parallel Computing[C]. 2022 International Workshop on Advanced Patterning Solutions (IWAPS). IEEE, 2022: 1-4, doi: 10.1109/IWAPS57146.2022.9972245.Download